Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes
| dc.contributor.author | Tkachuk, Andriy | |
| dc.contributor.author | Tetyorkin, Volodymyr | |
| dc.contributor.author | Sukach, Andriy | |
| dc.date.accessioned | 2022-06-21T11:18:59Z | |
| dc.date.available | 2022-06-21T11:18:59Z | |
| dc.date.issued | 2021 | |
| dc.description.abstract | (en) A comparative analysis of the mechanisms of dark current and noise in InAs homo- and heterojunction photodiodes is carried out. It is shown that an excess current of a tunneling nature is the cause of the low-frequency 1/f noise at low temperatures. At high temperatures, the main source of noise is the generation-recombination current in the depleted area. Theoretical models of noise in infrared photodiodes are analyzed as applied to the experimental results obtained in this work. | uk_UA |
| dc.identifier.citation | Tkachuk A. Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes / Andriy Tkachuk, Volodymyr Tetyorkin, Andriy Sukach // Proceedings of 44th International Semiconductor Conference CAS-2021 (an IEEE event), Online October 6-8, Romania. Bucharest, 2021. P. 279-282. | uk_UA |
| dc.identifier.uri | https://dspace.cusu.edu.ua/handle/123456789/4171 | |
| dc.language.iso | en | uk_UA |
| dc.subject | InAs | uk_UA |
| dc.subject | photodiodes | uk_UA |
| dc.subject | noise | uk_UA |
| dc.subject | dislocations | uk_UA |
| dc.subject | dark current | uk_UA |
| dc.title | Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes | uk_UA |
| dc.type | Article | uk_UA |
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