Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes
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Дата
2021
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Анотація
(en) A comparative analysis of the mechanisms of dark current and noise in InAs homo- and heterojunction photodiodes is carried out. It is shown that an excess current of a tunneling nature is the cause of the low-frequency 1/f noise at low temperatures. At high temperatures, the main source of noise is the generation-recombination current in the depleted area. Theoretical models of noise in infrared photodiodes are analyzed as applied to the experimental results obtained in this work.
Опис
Ключові слова
InAs, photodiodes, noise, dislocations, dark current
Бібліографічний опис
Tkachuk A. Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes / Andriy Tkachuk, Volodymyr Tetyorkin, Andriy Sukach // Proceedings of 44th International Semiconductor Conference CAS-2021 (an IEEE event), Online October 6-8, Romania. Bucharest, 2021. P. 279-282.