Dark current and 1/f noise in forward biased InAs photodiodes

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dc.contributor.authorTkachuk, Andrij
dc.date.accessioned2022-06-21T11:19:06Z
dc.date.available2022-06-21T11:19:06Z
dc.date.issued2021
dc.description.abstract(en) Dark current and low-frequency noise are studied in forward biased InAs photodiodes in the temperature range 77–290 K. Photodiodes were fabricated by diffusion of Cd into n-InAs single crystal substrates. It is shown that at temperatures >130 K the forward current is determined by the recombination of charge carriers with the participation of deep states in the middle of the band gap. At these temperatures, a correlation is found between forward current and 1/f noise. At lower temperatures, the forward current and noise is analyzed within a model of inhomogeneous p-n junction caused by dislocations in the depletion region. Experimental evidence has been obtained that multiple carrier tunneling is the main transport mechanism at low temperatures, which leads to an increase in low-frequency noise.uk_UA
dc.identifier.citationTkachuk A. I. Dark current and 1/f noise in forward biased InAs photodiodes / V.V.Tetyorkin, A. V. Sukach, A. I. Tkachuk // Semiconductor Physics, Quantum Electron & Optoelectronics. 2021. Vol. 24, No 4. P. 466-471.uk_UA
dc.identifier.urihttp://dspace.kspu.kr.ua/jspui/handle/123456789/4172
dc.language.isoenuk_UA
dc.subjectInAs photodiodesuk_UA
dc.subject1/f noiseuk_UA
dc.subjecttunnelinguk_UA
dc.subjectdislocationsuk_UA
dc.titleDark current and 1/f noise in forward biased InAs photodiodesuk_UA
dc.typeArticleuk_UA

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