Dislocation-related conductivity in Au(In)/Cd1-xZnxTe Schottky contacts

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dc.contributor.authorTkachuk, Andriy
dc.contributor.authorTetyorkin, Volodymyr
dc.contributor.authorSukach, Andriy
dc.contributor.authorТкачук, Андрій Іванович
dc.contributor.authorТетьоркін, Володимир Володимирович
dc.contributor.authorСукач, Андрій Васильович
dc.date.accessioned2022-06-20T11:26:13Z
dc.date.available2022-06-20T11:26:13Z
dc.date.issued2021
dc.description.abstract(en) Dislocation-related conductivity is studied in Schottky contacts Au(In)/Cd1-xZnxTe (x=0, 0.1) prepared on the surface of single crystals modified by multiple irradiation with a ruby laser and mechanical polishing. The contacts were examined by measuring the DC current as a function of the applied bias and temperature as well as the photoelectric response. It is shown that both methods of surface modification result in p-to-n conversion of the conductivity type of the surface layer. The charge transfer in contacts is explained by the formation of dislocation networks buried under the surface. A model of two potential barriers is proposed for the interpretation of the photovoltaic response in contacts. Their existence is associated with compressive strains in the modified surface layer caused by dislocations, which leads to an increase in the band gap and the formation of a heterostructureuk_UA
dc.identifier.citationTkachuk А. Dislocation-related conductivity in Au(In)/Cd1-xZnxTe Schottky contacts / Andriy Tkachuk, Volodymyr Tetyorkin, Andriy Sukach // Eur. Phys. J. Appl. Phys. 2021. Vol. 96, No 2. 20101 (2021).uk_UA
dc.identifier.urihttps://dspace.cusu.edu.ua/handle/123456789/4164
dc.language.isoenuk_UA
dc.subjectSchottky contactsuk_UA
dc.subjectAu(In)/Cd1-xZnxTeuk_UA
dc.subjectdislocation-related conductivityuk_UA
dc.titleDislocation-related conductivity in Au(In)/Cd1-xZnxTe Schottky contactsuk_UA
dc.typeArticleuk_UA

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