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Dark Current and Noise in Diffused and Epitaxial InAs Photodiodes
(2021) Tkachuk, Andriy; Tetyorkin, Volodymyr; Sukach, Andriy
(en) A comparative analysis of the mechanisms of dark current and noise in InAs homo- and heterojunction photodiodes is carried out. It is shown that an excess current of a tunneling nature is the cause of the low-frequency 1/f noise at low temperatures. At high temperatures, the main source of noise is the generation-recombination current in the depleted area. Theoretical models of noise in infrared photodiodes are analyzed as applied to the experimental results obtained in this work.
Dislocation-related conductivity in Au(In)/Cd1-xZnxTe Schottky contacts
(2021) Tkachuk, Andriy; Tetyorkin, Volodymyr; Sukach, Andriy; Ткачук, Андрій Іванович; Тетьоркін, Володимир Володимирович; Сукач, Андрій Васильович
(en) Dislocation-related conductivity is studied in Schottky contacts Au(In)/Cd1-xZnxTe (x=0, 0.1) prepared on the surface of single crystals modified by multiple irradiation with a ruby laser and mechanical polishing. The contacts were examined by measuring the DC current as a function of the applied bias and temperature as well as the photoelectric response. It is shown that both methods of surface modification result in p-to-n conversion of the conductivity type of the surface layer. The charge transfer in contacts is explained by the formation of dislocation networks buried under the surface. A model of two potential barriers is proposed for the interpretation of the photovoltaic response in contacts. Their existence is associated with compressive strains in the modified surface layer caused by dislocations, which leads to an increase in the band gap and the formation of a heterostructure